METHOD FOR ETCHING CONTROL GATE IN SEMICONDUCTOR FLASH MEMORY FABRICATION

摘要

PURPOSE: A method for etching a control gate in semiconductor flash memory fabrication is provided to eliminate initial sidewall polymer by controlling the supply ratio of HeO2 or O2/N2 and the supply ratio of source power and bias power. CONSTITUTION: HeO2 of the first set scope is supplied(S200). O2 of the second set scope is supplied(S202). N2 of the third set scope is supplied(S204). The ratio of the source power and bias power is controlled within the fourth set scope(S206).