发明名称 |
Dual damascene aperture formation method absent intermediate etch stop layer |
摘要 |
Within a method for forming a dual damascene aperture there is surface treated a first dielectric layer to form a surface treated first dielectric layer having a first surface composition different than a first bulk composition. There is then formed upon the surface treated first dielectric layer a second dielectric layer having a second bulk composition. Finally, there is then formed through the second dielectric layer a trench contiguous with and overlapping a via formed through the surface treated first dielectric layer. Within the present invention, when forming the trench through the second dielectric layer an endpoint is determined by detecting a difference between the second bulk composition and the first surface composition.
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申请公布号 |
US6706637(B2) |
申请公布日期 |
2004.03.16 |
申请号 |
US20020143700 |
申请日期 |
2002.05.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN YU-HUEI;CHENG YAO-YI;JANG SUNG-MING;YU CHEN-HUA |
分类号 |
H01L21/768;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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