TRANSISTOR OF SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A method for fabricating a transistor of a semiconductor device is provided to prevent a punch-through phenomenon by recessing the upper surface of a semiconductor substrate having a channel so that the lower surface of a gate oxide layer becomes lower than the upper surface of a junction region. CONSTITUTION: A shallow trench having a recessed upper surface is formed in a predetermined region of the semiconductor substrate(100). A gate pattern is formed on the shallow trench. An impurity region is formed in the semiconductor substrate in the periphery of the gate pattern. The semiconductor substrate under the gate pattern is lower than the upper surface of the impurity region.