| 摘要 |
PURPOSE: A method for forming a capacitor of semiconductor devices is provided to increase capacitance by preventing losses of a polysilicon layer as a lower electrode. CONSTITUTION: A lower layer(2) having a plug(3) is formed on a silicon substrate(1). A sacrificial layer(4) is formed on the lower layer(2). A contact hole(5) for defining a lower electrode formation region is formed to expose the surface of the plug(3) by selectively etching the sacrificial layer(4). A polysilicon layer(6) is deposited at inner walls of the contact hole(5) and on the sacrificial layer(4). A photoresist layer(7) is entirely filled into the contact hole(5) and partially removed to expose the polysilicon layer(6) by etch back. The exposed polysilicon layer(6) is selectively removed to expose the sacrificial layer by etch back using Cl2-containing gas, such as Cl2/BCl3 or Cl2/N2.
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