| 发明名称 |
METHOD FOR IMPROVING PERFORMANCE IN MICROELECTRONIC CIRCUIT |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for improving performance in a microelectronic circuit. <P>SOLUTION: A method and a structure for an integrated circuit transistor include a gate conductor having a first conductive material and a second material. The structure has a spacer that is adjacent to the gate conductor and cannot be deformed, and the gap between the gate conductor and the spacer. The first conductive material can be polysilicon, and the second material can be either metal or a polymer. The second material operates as a place holder for the gap. An environmental gas is contained by the gap, and resistance in the gate conductor is reduced. <P>COPYRIGHT: (C)2004,JPO |
| 申请公布号 |
JP2004080036(A) |
申请公布日期 |
2004.03.11 |
| 申请号 |
JP20030292574 |
申请日期 |
2003.08.12 |
| 申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
CLEVENGER LAWRENCE A;FENG GEORGE C;HARPER JAMES M E;LEWIS L SUU |
| 分类号 |
H01L21/28;H01L21/336;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L21/28 |
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