发明名称 |
SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To control the space of a light emission point of each semiconductor laser chip by self-alignment in a semiconductor laser element array which is subjected to hybrid integration. <P>SOLUTION: The semiconductor laser device 100 is formed of silicon, for example, and has a substrate 10 having a first recess 10a, and a second recess 10b formed on a major surface apart from each other. A first semiconductor laser element 11 which is made to be a functional block emitting an infrared laser beam is set in the first recess 10a, and a second semiconductor laser element 12 which is made to be a functional block emitting a red laser beam is set in the second recess 10b. <P>COPYRIGHT: (C)2004,JPO</p> |
申请公布号 |
JP2004079854(A) |
申请公布日期 |
2004.03.11 |
申请号 |
JP20020239636 |
申请日期 |
2002.08.20 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
ONOZAWA KAZUTOSHI;UEDA TETSUZO;UEDA DAISUKE |
分类号 |
H01S5/022;G11B7/00;G11B7/125;G11B7/22;H01S3/04;H01S5/00;H01S5/02;H01S5/40;(IPC1-7):H01S5/022 |
主分类号 |
H01S5/022 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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