| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a nano SOI wafer having extremely excellent uniformity in thickness without using a CMP process and a wafer manufactured by the method. SOLUTION: In the manufacturing method of the nano SOI wafer, a bonded wafer and a reference wafer are provided, an insulating film is formed at least on one surface of the bonded wafer, an impurity ion is implanted at a low voltage by a specific depth from the surface of the bonded wafer for forming an impurity ion implantation section, the insulating film of the bonded wafer is allowed to come into contact with the reference wafer, low-temperature heat treatment is performed for cleaving the impurity ion implantation section of the bonded wafer, and the cleaved surface of the bonded wafer bonded to the reference wafer is etched for forming an element formation region in a nano scale. The etching to the cleaved surface is performed by hydrogen surface treatment and wet etching. COPYRIGHT: (C)2004,JPO
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