| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the conditions are hard to be realized in the distance between a first layer which is patterned and has a step to a periphery and a second layer formed thereafter, in the case of a semiconductor device which is important to the distance between the two layers and yield of high dispersion thereof and needs to reduce the distance. SOLUTION: Treatment which has little dispersion all over a sample and is close to desired setting can be carried out by performing partial treatment repeatedly for a sample all over the sample and carrying out treatment in each position separately optimally. A means for knowing the thickness after treatment is provided on the first layer of the sample and thereby the distance between the first layer and the second layer which is thereafter formed can be measured. According to these methods, it is possible to prepare the distance between the two layers accurately, to reduce dispersion in a sample plane and to know the final distance accurately. COPYRIGHT: (C)2004,JPO
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