| 摘要 |
PROBLEM TO BE SOLVED: To provide a SONOS (silicon oxynitride oxide semiconductor) memory device which solves the problem of bringing about a damage on a substrate surface in a peripheral circuit region when etching a polysilicon and to provide a method for manufacturing the same. SOLUTION: The method for manufacturing the memory device structure includes a step of forming a tunnel oxide layer, a silicon nitride layer and a silicon oxide layer. Then, a conductive layer is formed on this silicon oxide layer. The conductive layer is then patterned to form a conductive gate layer. The silicon oxide layer is patterned during the same step as patterning the conductive layer to expose the silicon nitride layer. Subsequently, a blanket insulating layer is formed on the substrate. This blanket insulating layer is patterned by one time etching step, and a spacer wall is formed on the side face of the gate layer. COPYRIGHT: (C)2004,JPO
|
