| 摘要 |
A ferroelectric-type nonvolatile semiconductor memory comprises a bit line BL1, a transistor for selection TR1, (C) a memory unit MU1 composed of memory cells that are M in number (M>=2), and (D) plate lines PL that are M in number; in which each memory cell comprises a first electrode 21, 31, a ferroelectric layer 22, 32 and a second electrode 33, 34, in the memory unit MU1, the first electrodes 21, 31 of the memory cells are in common, the ferroelectric layer 22, 32 is composed of lead titanate zirconate [Pb(Zrx,Tiy)O3], and said lead titanate zirconate has a composition that satisfies 0.6<Y/(X+Y)<=0.9.
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