发明名称 |
Gate structures in nonvolatile memory devices having curved side walls formed using oxygen pathways and methods of forming same |
摘要 |
Gate structures of a non-volatile integrated circuit memory device can include a thermal oxidation layer on a substrate beneath the gate structure that defines a side wall of the gate structure. An oxygen diffusion barrier layer is on the side wall of the gate structure and a floating gate is on the thermal oxidation layer and has a curved side wall portion. Related methods are also discussed.
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申请公布号 |
US2004046206(A1) |
申请公布日期 |
2004.03.11 |
申请号 |
US20030629280 |
申请日期 |
2003.07.29 |
申请人 |
YUN JAE-SUN;SHIN JIN-HYUN |
发明人 |
YUN JAE-SUN;SHIN JIN-HYUN |
分类号 |
H01L21/8247;H01L21/28;H01L21/336;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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