NONVOLATILE MEMORY DEVICE WITH DUMMY PATTERN

摘要

PURPOSE: A nonvolatile memory device having a dummy pattern is provided to be capable of preventing dishing in CMP(Chemical Mechanical Polishing). CONSTITUTION: A plurality of active regions are formed in a cell region(100) of a semiconductor substrate(101). A plurality of cell line patterns(120) are formed on the active regions. A pair of tunnel insulating layers(104) and floating gate electrodes(105) are formed between the cell line patterns(120) and the active regions. A pair of control gate lines(125a) are formed at sidewalls of the cell line. A dummy regions(200) including at least one dummy line pattern(220) are formed between the cell and peripheral region. Each cell line pattern(120) is provided with a curved sidewall(d) and a plane sidewall(c), a pair of spacer lines(107), and a source line(113) formed between the spacer lines to connect the active region.