| 摘要 |
PURPOSE: To reduce an incident light intruding into adjacent photo diodes to realize the reduction of the crosstalk phenomenon. CONSTITUTION: The solid state imaging apparatus has: unit cells C arranged in rows and columns on a semiconductor substrate 1, each having a photo diode D for storing a signal charge and a reading circuit 19 for reading the signal charge of the diode D; a wiring layer-containing interlayer film formed on the substrate 1; and a horizontal screen film having openings 13 above the photo diodes D in the unit cells on the interlayer film. The apparatus comprises first vertical screen barriers 15 disposed among the unit cells 2 adjacent along the rows, and second vertical screen barriers 16 disposed among the unit cells C adjacent along the columns. The first and the second vertical screen barriers 15, 16 are buried between the semiconductor substrate 1 surface and the horizontal screen film.
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