发明名称 |
SEMICONDUCTOR DEVICE AND ITS PRODUCING PROCESS, CIRCUIT BOARD AND ELECTRONIC APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To grind a semiconductor substrate to a substantially constant thickness while enhancing the productivity and yield. <P>SOLUTION: A protrusion 40 is formed on a semiconductor substrate 10 having a first region 20 and a second region 30 on the periphery thereof to project above the first region 20. A support 60 is provided on the side of the semiconductor substrate 10 where the protrusion 40 is formed such that a part overlapping the first region 20 becomes a through hole 61. The semiconductor substrate 10 is ground from the side of the semiconductor substrate 10 opposite to the side where the protrusion 40 is formed. <P>COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2004079951(A) |
申请公布日期 |
2004.03.11 |
申请号 |
JP20020241827 |
申请日期 |
2002.08.22 |
申请人 |
SEIKO EPSON CORP |
发明人 |
KARASAWA FUMIAKI;YUZAWA TAKESHI |
分类号 |
H01L21/304;H01L21/68;H01L21/78 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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