| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist material with excellent linearity capable of forming a fine resist pattern less than 2.0 μm in a low NA condition with NA less than 0.2, suitably used for system LCD manufacturing. <P>SOLUTION: This positive photoresist composition contains (A)alkali-soluble resin, (B) naphthoquinone diazide esterificated substance, (C) at least one kind of phenolic hydroxy group-containing compound selected from a group consisting of compounds expressed by a general formula (I), (R<SP>1</SP>-R<SP>6</SP>are each independently hydrogen atom, halogen atom, 1-6C alkyl group or 1-6C alkoxy group; R<SP>7</SP>is hydrogen atom or 1-6C alkyl group; a and b are independently integers 1-3), and (D) an organic solvent. <P>COPYRIGHT: (C)2004,JPO |
