| 摘要 |
PROBLEM TO BE SOLVED: To provide a reactive sputtering method by which deposition of film in a transition mode region can be stably maintained. SOLUTION: The reactive sputtering method uses a sputtering system having a substrate and a sputtering evaporation source 2 mounted with a metallic target arranged in a vacuum chamber 1, a power source 4 for driving the evaporation source 2, and an introducing mechanism 5 for introducing inert gas for sputtering and reactive gas for forming a compound with the sputtered metal into the vacuum chamber 1. The method comprises controlling the power source 4 in such a manner that the sputtering voltage Vp to be applied to the evaporation source 2 attains the target voltage Vs when evaporating metal from the sputtering evaporation source 2 and depositing the compound film of the metal and the reactive gas on the substrate 3. In the above method, the sputtering voltage is so controlled as to attain a poisoning mode region at the start of an electric discharge for sputtering and thereafter the sputtering voltage is so controlled as to shift to the transition mode region. COPYRIGHT: (C)2004,JPO
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