METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING SILICON OXIDE LAYER

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device including a silicon oxide layer whereby it is possible to prevent the occurrence of a silicon coating and particles in a reaction chamber, prevent metal silicidation, and prevent a metal layer from being oxidized.

SOLUTION: The method comprises the step of loading a semiconductor substrate into the reaction chamber for performing deposition, the step of charging nitrogen atmosphere gas which contains a nitrogen element decomposable at low temperature into the reaction chamber to generate a nitrogen atmosphere in the reaction chamber, and the step of charging silicon source gas and oxygen source gas into the reaction chamber to deposit a silicon oxide layer on the semiconductor layer.

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