| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory in which power consumption can be suppressed. <P>SOLUTION: The transistor Qn20 of a previous cycle and the transistor Qn21 of a next cycle are multiple-selected for a fixed period by a column decoder control circuit 10 before the start of pre-charge. Electric charges charged in the bit line BLO of a previous cycle are distributed uniformly through the transistors Qn20 and Qn21. Consequently, quantity of electric charges being discharged is made 1/2, and power consumption can be reduced. <P>COPYRIGHT: (C)2004,JPO</p> |
