| 摘要 |
PROBLEM TO BE SOLVED: To relieve concentration of electric field in a gate insulated film edge and restrain increase of leakage current, in an FET. SOLUTION: The FET is provided with a channel region formed on a surface of a semiconductor substrate, a source-drain region which is formed on the semiconductor substrate of both sides of the channel region, a first insulating film which is formed so as to cover at least the channel region, a second insulating film which is formed on a side part of the first insulating film so as to be in contact with the first insulating film and in contact with the semiconductor substrate on the source-drain region and whose permittivity is lower than that of the first insulating film, a third insulating film which is laminated on the second insulating film and whose permittivity is lower than that of the first insulating film and higher than the second insulating film, and a gate electrode formed on the first and the third insulating films. COPYRIGHT: (C)2004,JPO
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