发明名称 |
ALUMINUM NITRIDE SINTERED COMPACT, METALIZED SUBSTRATES, HEATER, FIXTURE AND METHOD OF MANUFACTURING ALUMINUM NITRIDE SINTERED COMPACT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact having a larger surface area and smaller thickness compared to the corresponding sintered compact of the prior art and further having flatness with controlled warpage or waviness, a method of manufacturing the aluminum nitride sintered compact, a metalized substrate and a heater using the aluminum nitride sintered compact. <P>SOLUTION: The aluminum nitride substrate 1 has ≥320 mm maximum length ML, <0 mm to ≤2 mm thickness, ≥0 μm/mm to <2 μm/mm warpage and ≥0 μm to ≤100 μm height of local waviness. <P>COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2004075429(A) |
申请公布日期 |
2004.03.11 |
申请号 |
JP20020235571 |
申请日期 |
2002.08.13 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
ITO YASUSHI;ISHIZU SADAMU;CHIKUGI YASUSHI |
分类号 |
H05B3/20;C04B35/581;C04B35/638;C04B35/64;H01L23/13;H05B3/10;H05B3/14;H05B3/16 |
主分类号 |
H05B3/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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