发明名称 ALUMINUM NITRIDE SINTERED COMPACT, METALIZED SUBSTRATES, HEATER, FIXTURE AND METHOD OF MANUFACTURING ALUMINUM NITRIDE SINTERED COMPACT
摘要 <P>PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact having a larger surface area and smaller thickness compared to the corresponding sintered compact of the prior art and further having flatness with controlled warpage or waviness, a method of manufacturing the aluminum nitride sintered compact, a metalized substrate and a heater using the aluminum nitride sintered compact. <P>SOLUTION: The aluminum nitride substrate 1 has &ge;320 mm maximum length ML, <0 mm to &le;2 mm thickness, &ge;0 &mu;m/mm to <2 &mu;m/mm warpage and &ge;0 &mu;m to &le;100 &mu;m height of local waviness. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004075429(A) 申请公布日期 2004.03.11
申请号 JP20020235571 申请日期 2002.08.13
申请人 SUMITOMO ELECTRIC IND LTD 发明人 ITO YASUSHI;ISHIZU SADAMU;CHIKUGI YASUSHI
分类号 H05B3/20;C04B35/581;C04B35/638;C04B35/64;H01L23/13;H05B3/10;H05B3/14;H05B3/16 主分类号 H05B3/20
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