| 摘要 |
<P>PROBLEM TO BE SOLVED: To control a patterning geometry by replacing excess acid on the boundary face between a resist and a base film by applying a basic substrate treating agent in which an acid generating agent which generates a weak acid on the resist base film is added. <P>SOLUTION: The semiconductor device is manufactured in a process in which an insulating film is formed on a substrate to be processed, a process in which a substrate treating agent including at least a solvent and an acid generating agent is applied on the insulating film, a process in which a resist is applied on the insulating film after the substrate treating agent is applied, a process in which the resist is patternized by a lithography, and a process in which the patterning of the resist is copied to the first insulating film with a first dry etching. <P>COPYRIGHT: (C)2004,JPO |
