| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a highly precise semiconductor wafer from a columnar silicon single crystal ingot. SOLUTION: This method includes a process of grinding a plurality of annular recessed grooves 3 having the width adding a silicon width 3a and the thickness of the semiconductor wafer 2 in the circumference of a trunk of the silicon single crystal ingot 1, a process of polishing a plurality of annular recessed grooves, a process of slicing the plurality of annular recessed grooves as the references, and a process of surface-grinding or surface-polishing the sliced semiconductor wafer. The annular recessed groove has an approximately trapezoidal cross section, the width of the bottom surface is set to the slicing width, the slope faces in the both sides of the bottom face are set to the one-side slope faces on the edge parts in the outer circumferences of the adjoining sliced semiconductor wafers. COPYRIGHT: (C)2004,JPO
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