| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure for suppressing the degrading of a light emitting element as much as possible and for assuring sufficient capacitance element (capacitor) required for each pixel. SOLUTION: On a transistor, a first passivation film 118, a second metal layer, a flattened film 121, a barrier film 122, and a third metal layer are laminated in this order. The side surface of a first opening provided on the flattened film 121 is covered with the barrier film. A second opening is provided inside the first opening. The third metal layer is connected to the semiconductor through the first opening and the second opening. The capacitance element is provided where the semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film 118, and the second metal layer, are laminated. COPYRIGHT: (C)2004,JPO
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