发明名称 |
METHOD OF FORMING NANOCRYSTALS |
摘要 |
<p>Nanocrystals (20) are formed in a semiconductor, such as for example, in a memory having a floating gate. A dielectric (18) overlies a substrate (12) and is placed in a chemical vapor deposition chamber (34). A first precursor gas, such as disilane (36), is flowed into the chemical vapor deposition chamber during a first phase to nucleate the nanocrystals (20) on the dielectric with first predetermined processing conditions existing within the chemical vapor deposition chamber for a first time period. A second precursor gas, such as silane, is flowed into the chemical vapor deposition chamber during a second phase subsequent to the first phase to grow the nanocrystals under second predetermined processing conditions existing within the chemical vapor deposition chamber for a second time period.</p> |
申请公布号 |
WO2004021423(A1) |
申请公布日期 |
2004.03.11 |
申请号 |
WO2003US16289 |
申请日期 |
2003.05.22 |
申请人 |
MOTOROLA, INC., A CORPORATION OF THE STATE OF DELAWARE |
发明人 |
RAO, RAJESH, A.;MURALIDHAR, RAMACHANDRAN;MERCHANT, TUSHAR, P. |
分类号 |
C23C16/02;C23C16/24;H01L21/205;H01L21/28;H01L21/8247;H01L27/115;H01L29/06;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L21/205;H01L21/824;H01L29/12;H01L21/336 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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