发明名称 VOLTAGE CONTROL CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a voltage control circuit provided with a function suppressing voltage rise of a divided potential in a capacity dividing circuit. <P>SOLUTION: A voltage control circuit comprises a capacity dividing circuit generating a second potential in a second terminal by capacity-dividing a first potential received by a first terminal and an NMOS transistor provided between the first terminal and the second terminal and providing the upper limit at the second potential when the first potential is raised by operation in which a source potential is lower always than a gate potential by a threshold value. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004079036(A) 申请公布日期 2004.03.11
申请号 JP20020234857 申请日期 2002.08.12
申请人 FUJITSU LTD 发明人 TANUMA YASUHIKO
分类号 G11C16/06;H02M3/07;(IPC1-7):G11C16/06 主分类号 G11C16/06
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