FORMING METHOD OF FINE PATTERN, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form a fine pattern in a semiconductor surface readily at a low cost. SOLUTION: The method comprises at least a process for selectively irradiating the surface of a single crystalline substrate 1 with a first charged particle as FIB by a focused ion beam (FIB) device 3, and a process for injecting a second charged particle. A fine structure of nano meter level can be readily formed without using an expensive electronic beam aligner, an X-ray aligner or the like. For example, a fine structure of a recessed part of a regular depth of 250nm and a diameter of about 50nm, and a wall separating the recessed parts mutually having a thickness of about 5nm can be prepared readily in the surface of the single crystalline substrate 1. COPYRIGHT: (C)2004,JPO