Method of planarization of semiconductor devices

摘要

A method of planarizing a semiconductor device includes the steps of providing a semiconductor substrate, forming a semiconductor component over the semiconductor substrate, depositing a doped silicate glass layer over the semiconductor component using a high density plasma chemical vapor deposition, the doped silicate glass layer forming a protrusion directly over the semiconductor component, and planarizing the doped silicate glass layer by a chemical mechanical polishing process to remove the protrusion.