| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a liquid crystal display device with improved characteristics. <P>SOLUTION: A semiconductor layer 8 of a thin film transistor (TFT) 7 and one electrode 10 of an auxiliary capacitance 9 are formed. A gate insulating film 11 containing a capacitance region 12 is formed on the semiconductor layer 8 and the one electrode 10. An impurity is doped into the semiconductor layer 8 and the one electrode 10 of the auxiliary capacitance 9 via the gate insulating film 11 so as to make the one electrode 10 metal-like. After doping of the impurity a surface of the gate insulating film 11 is removed. A gate electrode 19 and the other electrode 20 are formed via the gate insulating film 11. As any damage on the surface of the gate insulating film 11 is removed, slowdown of a voltage between a gate and a source due to variation of a bias voltage gets smaller, steepness of rise is increased. At the same time, as the TFT is certainly insulated with the gate insulating film 11, the TFT efficiently operates and consequently power consumption is suppressed. <P>COPYRIGHT: (C)2004,JPO</p> |
