发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve reliability by mitigating field convergence between wirings caused by the fineness thereof. SOLUTION: Bit lines BL1e, BL1o, and BL2e, BL2o of a wiring layer M1 are arranged to have smallest widths and smallest spaces in a chip, and a potential difference V1 at the maximum is imparted between the bit lines. The smallest space is provided with a value that causes no short circuit due to dielectric breakdown when the potential difference V1 is imparted between the bit lines. This value may be of the smallest machining dimension by design rule or lithography. A potential difference V2 (>V1) is imparted between a shield power wire BLSHIELD and the bit lines in the wiring layer M1, while the shield power wire BLSHIELD is sufficiently distanced from a region where the bit lines are arrayed at the smallest spaces. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004079857(A) 申请公布日期 2004.03.11
申请号 JP20020239732 申请日期 2002.08.20
申请人 TOSHIBA CORP 发明人 HOSONO KOJI;NAKAMURA HIROSHI;IMAMIYA KENICHI
分类号 H01L21/82;H01L21/8247;H01L23/52;H01L27/04;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 主分类号 H01L21/82
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