发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which can carry out signal switch option only in a required layer for circuit correction. SOLUTION: Signal switch option can be switched in an arbitrary layer by having a means for releasing from a first signal in a plurality of arbitrary layers, and a means for short-circuiting to a second signal in a plurality of arbitrary layers. The switch option mechanism has a pad region which is formed in each layer and arranged in a vertical direction and a contact hole formed between the pad regions. A contact hole in pad regions of one layer or wiring layers is in its open state, and a layer which requires mask correction can be minimized by attaining connection by short-circuiting a pad or a contact hole in its open state in a layer to be corrected. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004079846(A) 申请公布日期 2004.03.11
申请号 JP20020239425 申请日期 2002.08.20
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NAKASE AKIHISA
分类号 H01L21/82;(IPC1-7):H01L21/82 主分类号 H01L21/82
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