发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive type photosensitive composition which reduces the generation of development defects remarkably. <P>SOLUTION: The positive type resist composition includes (A) an oxime sulfonate compound, (B) a resin which has a specific structural unit, is decomposed by an action of an acid and has consequently its solubility in an alkaline developing liquid increased, and (C) a fluoro aliphatic containing polymeric compound. Thus, the positive type photoresist composition which reduces the generation of defects remarkably, is provided. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004078105(A) 申请公布日期 2004.03.11
申请号 JP20020241946 申请日期 2002.08.22
申请人 FUJI PHOTO FILM CO LTD 发明人 MOMOTA ATSUSHI
分类号 C08F20/24;C08F22/38;C08F28/02;C08F212/14;G03F7/004;G03F7/039;H01L21/027 主分类号 C08F20/24
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