| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a light emitting diode in which a light emitting diode having desired mechanical properties and translucency, and resistivity at a boundary surface between a transparent layer and a growth layer is minimized. <P>SOLUTION: Light emitting diode layers 32, 34, 36, and 38 are sequentially grown on a temporary growth substrate, and a light emitting diode structure 40 comprising comparatively thin layers is formed. Then the temporary growth substrate is removed, and a conductive and translucent substrate 42 is wafer-bonded to the light emitting diode layer 32 of a buffer layer for an underside layer in place of the temporary growth substrate, thereby producing the light emitting diode. <P>COPYRIGHT: (C)2004,JPO |
