| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To achieve processing that is quick and reliable by introducing a simple procedure even if a pattern as an object of division is very complicated in form in a complementary dividing process of an electron beam projection exposure mask. <P>SOLUTION: When an original pattern profile which is to be transferred by the use of an electron beam projection exposure mask is divided into a plurality of pattern profiles complementary to each other, following steps are provided, a step (S201) of subdividing the original pattern profiles into aggregates composed of rectangular patterns or triangular patterns as the apexes of the original pattern are made to serve as base points and steps (S202 to S207) of selectively compounding the subdivided rectangular or triangular patterns into the plurality of pattern profiles. <P>COPYRIGHT: (C)2004,JPO</p> |
