发明名称 Ferroelectric capacitors having oxidation barrier conductive layers and lower electrodes disposed in trenches defined by supporting insulating layers and methods of fabricating the same
摘要 Ferroelectric capacitors are provided that include an integrated circuit substrate and a supporting insulation layer on the integrated circuit substrate having a face and a trench in the face. An oxidation barrier conductive layer is provided in the trench and a lower electrode is provided on the oxidation barrier conductive layer. A ferroelectric layer is provided on the lower electrode and an upper electrode is provided on the ferroelectric layer. Related methods of fabricating ferroelectric capacitors are also provided.
申请公布号 US2004046196(A1) 申请公布日期 2004.03.11
申请号 US20030650879 申请日期 2003.08.29
申请人 KIM HYUN-HO 发明人 KIM HYUN-HO
分类号 H01L27/108;H01L21/02;H01L21/8246;(IPC1-7):H01L27/108 主分类号 H01L27/108
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