| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a miniaturized semiconductor device, reduced in contact resistance and improved in resistance to soft error. <P>SOLUTION: The semiconductor device is provided with a first wiring 15, wherein the active areas 2, 4 of transistors T1, T2 for a first inverter are connected to the gate electrode 5a of transistors T3, T4 for a second inverter through a first contact, and a second wiring 20, wherein the active regions 1, 2 of transistors T3, T4 for the second inverter are connected to the gate electrode 6a for the first inverter through a second contact. In this case, the first and second contacts are provided on at least one place with a diameter larger than that of upper and lower opening ends and a power supply wiring 20c which copes with the first wiring 15 and the second wiring 20 are embedded through a dielectric film 20b. <P>COPYRIGHT: (C)2004,JPO |
