| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of curing a silicon substrate which makes it possible to manufacture a cured silicon substrate having a minute and fine structure at a low cost, and also to provide a silicon substrate cured by the method. SOLUTION: The method of curing a silicon substrate uses a diffusion method which comprises processes of forming, on a front surface of the silicon substrate, a carbon layer which is mainly formed out of carbon atoms obtained from a carbon source; and thermally diffusing the carbon atoms in the carbon layer interiorly from the surface of the silicon substrate, by heating the silicon substrate formed with the carbon layer to a prescribed temperature by means of a heating means and keeping it at that temperature. COPYRIGHT: (C)2004,JPO
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