| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for preventing PN junction destruction and shorting due to the abnormal growth of a metal silicided object. SOLUTION: A first film formed of a first metal forming the silicided object by reacting with silicon is formed on a substrate where a silicon region is exposed at a part of a surface. A second film formed of a first high melting metal different from the first metal is formed on the first film. First heat treatment is performed. The substrate is made to react with the first film, and a monovalent metal silicide film is formed on the interface of them. The second film and the first film, which remain on the substrate, are removed. Second heat treatment is performed on the substrate from which the second film and the first film are removed. COPYRIGHT: (C)2004,JPO
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