| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment device that can treat an end face or notched section without performing chamfering in advance with small gas consumption. SOLUTION: This plasma treatment device 1 is constituted to treat a wafer 5 by utilizing reactive etching using a low-temperature plasma under a pressurized condition or under the atmospheric pressure. The device 1 is provided with a chamber 4 the inside of which can be controlled to a prescribed pressure and which is provided with a gas supply device 2 and a discharge device 3, a wafer rotating mechanism 7 which is fixedly arranged in the chamber 4 and rotates the wafer 5, and at least one electrode section 8 which is arranged in the chamber 4 to face the end face of the wafer 5 rotated by means of the rotating mechanism 7. When this device 1 is used, the end face of a hardly grindable material can be treated efficiently to a specular surface without chamfering the end face in advance or a notched section can be formed efficiently with a small gas consumption. COPYRIGHT: (C)2004,JPO
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