Radiation-emitting semiconductor component comprises an active layer arranged between n- and p-doped casing layers, and a diffusion stop layer having a tensioned superlattice arranged between the active layer and the p-doped casing layer

摘要

Radiation-emitting semiconductor component comprises an n-doped casing layer (18), a p-doped casing layer (20), an active layer (14) based on InGaAlP arranged between the casing layers, and a diffusion stop layer (16) having a tensioned superlattice arranged between the active layer and the p-doped casing layer.