发明名称 VERTICAL RESONATOR TYPE SURFACE EMISSION SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To solve such a problem that a conventional junction-down mounting type surface emission laser, where a substrate is opaque against laser light and the laser light is picked up from an opening made on the rear surface, suffers from low heat dissipation owing to the opening in the rear surface, and hence cannot sufficiently reduce thermal resistance. SOLUTION: The thickness of a semiconductor layer between an active layer and a light emitting surface is made to be 8μm or more, a heat produced in a light emission part can be dissipated through a route allowing the heat to directly flow from the light emission part to a heat sink, as well as a route allowing the heat to spread from the light emission part to the side of a substrate. Therefore, thermal resistance of a component can be reduced. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004079833(A) 申请公布日期 2004.03.11
申请号 JP20020239146 申请日期 2002.08.20
申请人 TOSHIBA CORP 发明人 TAKAOKA KEIJI;NISHIGAKI MICHIHIKO;EZAKI ZUISEN;HATAGOSHI GENICHI
分类号 H01S5/187;(IPC1-7):H01S5/187 主分类号 H01S5/187
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