| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical junction field effect transistor having a low loss while a high drain breakdown voltage is maintained. SOLUTION: The vertical junction field effect transistor 1a includes an n+-type drain semiconductor part 2, an n-type drift semiconductor part 3, a p+-type gate semiconductor part 4, an n-type channel semiconductor part 5, and an n+-type source semiconductor part 7. The drift semiconductor part 3 is provided on a main surface of the semiconductor part 2 and has first-third regions 3b, 3c, 3d extended in a direction crossing with this main surface. The gate semiconductor part 4 includes a reverse conductivity type to the conductivity type of the semiconductor part 3, and is provided on first and second regions 3b, 3c of the semiconductor part 3. The semiconductor part 5 is provided along the gate semiconductor part 4, has a different conductivity type from the conductivity type of the semiconductor part 4 and is electrically connected to the third region 3d of the semiconductor part 3. COPYRIGHT: (C)2004,JPO
|
