TRANSISTOR, ELECTRONIC CIRCUIT, METHOD FOR OPERATING TRANSISTOR, AND METHOD FOR USING ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To further improve the radiation resistance of a transistor. SOLUTION: The transistor includes an insulator (2), a semiconductor layer (3) formed on the insulator (2), a gate electrode (8), and a gate insulating layer (7) interposed between the electrode (8) and the layer (3). The layer (3) includes a first conductivity source region (4), a first conductivity drain region (6), and a second conductivity body region (5) different from the first conductivity and interposed between the source region (4) and the drain region (6). The gate electrode (8) is formed so that the body region (5) is covered with the electrode (8). The region (5) has a high impurity concentration, and more particularly, the impurity concentration of the region (5) is 1020-1022cm-3. COPYRIGHT: (C)2004,JPO