发明名称 ORGANIC THIN FILM FIELD EFFECT TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide an organic thin film field effect transistor which exhibits a high performance and which has small OFF current flowing between a source electrode and a drain electrode and a low power consumption. SOLUTION: In the organic thin film field effect transistor including at least the source electrode, the drain electrode, a gate insulating film, and an organic semiconductor thin film, the source electrode and the drain electrode disposed on the surface of the organic semiconductor thin film disposed on the gate insulating film are disposed at central part in the semiconductor thin film. Thus, the OFF current is suppressed in the transistor having high performance while field effect transistor characteristics are maintained. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004079623(A) 申请公布日期 2004.03.11
申请号 JP20020234920 申请日期 2002.08.12
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 HOSHINO SATOSHI;KAMATA SHUNEI;YATSUSE KIYOSHI
分类号 H01L51/05;H01L29/786;H01L51/00;(IPC1-7):H01L29/786 主分类号 H01L51/05
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