| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device in which multi-bit data can be written simultaneously even when the device is provided with memory cells containing magnetoresistive elements. SOLUTION: This semiconductor integrated circuit device is provided with a first column gate circuit CG0 which electrically connects a first group 2-0 of bit lines to a group 1 of data lines based on a first column selection signal CSL0, a second column gate circuit CG1 which electrically connects a second group 2-1 of bit lines to the group 1 of data lines based on a second column selection signal CSL1, and a plurality of word lines WWL which intersect a plurality of bit lines BL contained in the first and second groups 2-0 and 2-1 of bit lines. This device is also provided with a plurality of memory cells 10 which are electrically connected to the plurality of bit lines BL selected by the plurality of word lines WWL, and contains magnetoresistive elements 12. Spinning directions of the magnetoresistive elements 12 are made perpendicular to the bit lines BL in a top view of this device. COPYRIGHT: (C)2004,JPO
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