METHOD FOR MANUFACTURING FERROELECTRIC MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a ferroelectric memory device is provided to be capable of reducing the thickness of an upper electrode. CONSTITUTION: A lower interlayer dielectric(74) is formed on a semiconductor substrate(51). A ferroelectric capacitor(82) and a hard mask pattern are sequentially stacked on the lower interlayer dielectric. An intermetal dielectric(85a) is formed on the resultant structure and planarized to expose the hard mask pattern. By selectively etching the exposed hard mask pattern, the ferroelectric capacitor(82) is exposed. A plate line is then formed on the exposed ferroelectric capacitor.