| 发明名称 |
CONDUCTIVE CONTACT STRUCTURE AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide conductive connection structure for electrical connection to a source/drain area in a semiconductor substrate, and to provide a method for manufacturing the structure. <P>SOLUTION: Fitting apertures containing a pad aperture and a bottom aperture are formed in a dielectric layer on the semiconductor substrate. The pad aperture is larger than the bottom aperture exposing the source/drain area and positioned on the bottom aperture. The bottom aperture and the pad aperture are successively filled with a polysilicon layer and a tungsten layer for respectively forming a bottom plug and a metal pad layer. <P>COPYRIGHT: (C)2004,JPO |
| 申请公布号 |
JP2004079902(A) |
申请公布日期 |
2004.03.11 |
| 申请号 |
JP20020240809 |
申请日期 |
2002.08.21 |
| 申请人 |
HUABANG ELECTRONIC CO LTD |
发明人 |
YANG CHIH-HSIEN;CHUANG YUEH-CHENG;SHUE BOR-RU |
| 分类号 |
H01L21/285;H01L21/60;H01L21/768;H01L21/8242;H01L23/485;H01L23/532;H01L27/108 |
主分类号 |
H01L21/285 |
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