发明名称 GAS TREATMENT DEVICE AND GAS TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide a gas treatment device and a gas treatment method for uniformly feeding gas to a substrate to perform uniform gas treatment. SOLUTION: The gas treatment device 1 comprises a treatment vessel 2 to treat a wafer W by using treatment gas, a loading table 5 which is disposed in the treatment vessel 2 with the wafer W loaded thereon, a shower head 22 which is provided corresponding to the wafer W on the loading table 5 to discharge treatment gas into the treatment vessel 2, and an evacuating device to evacuate the treatment vessel 2. The shower head 22 has a first gas discharge hole 46 formed corresponding to the wafer W loaded on the loading table 5, and a second gas discharge hole 47 which is separate from the first gas discharge hole 46 and provided around the first gas discharge hole 46 to discharge the treatment gas to a peripheral part of the wafer W on the loading table 5. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004076023(A) 申请公布日期 2004.03.11
申请号 JP20020222145 申请日期 2002.07.30
申请人 TOKYO ELECTRON LTD 发明人 KASAI SHIGERU;YAMAMOTO NORIHIKO;TANAKA MASAYUKI
分类号 C23C16/455;C23C16/14;C23C16/44;H01L21/285;H01L21/768;(IPC1-7):C23C16/455 主分类号 C23C16/455
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