| 摘要 |
PROBLEM TO BE SOLVED: To prevent a transistor from being destroyed without extending the W length of a high breakdown voltage MOSFET by a high breakdown voltage insulated gate version field effect off-transistor. SOLUTION: The high breakdown voltage insulated gate version field effect off-transistor is provided with second conductivity type high-concentration source/drain areas formed spaced therebetween on the surface of a first conductivity type semiconductor area, a channel area of the first conductivity type semiconductor area between the high concentration source area and the high concentration drain area, a low concentration drain area of a low impurity concentration formed around the high concentration drain area in contact with the channel area, a gate insulating film formed on the channel area, a high breakdown voltage insulating film which is formed on the low concentration drain area of the low impurity concentration and which is thicker than the gate insulating film, a gate electrode formed on the gate insulating film and the high breakdown voltage insulating film, and a structure of grounding the gate electrode to a substrate via the wiring. COPYRIGHT: (C)2004,JPO
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