发明名称 |
Nonvolatile semiconductor memory with a programming operation and the method thereof |
摘要 |
The invention provides a method of programming in a nonvolatile semiconductor memory device, having a plurality of memory cell strings connected to a plurality of bitlines and constructed of a plurality of memory cell transistors whose gates are coupled to a plurality of wordlines, and a plurality of registers corresponding to the bitlines. The method involves applying a first voltage to a first one of the bitlines and applying a second voltage to a second one of the bitline, the first bitline being adjacent to the second bitline, the first and second voltages being supplied from the registers; electrically isolating the first and second bitlines from their corresponding registers; charging the first bitline up to a third voltage higher than the first voltage and lower than the second voltage; and applying a fourth voltage to a wordline after cutting off current paths into the first and second bitlines.
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申请公布号 |
US2004047214(A1) |
申请公布日期 |
2004.03.11 |
申请号 |
US20030659634 |
申请日期 |
2003.09.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG JAE-YOUNG;LEE SUNG-SOO |
分类号 |
G11C16/02;G11C16/04;G11C16/06;G11C16/10;G11C16/24;(IPC1-7):G11C7/00 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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