发明名称 TREATING APPARATUS AND METHOD OF TREATING
摘要 <p>In a treating apparatus, treating gases containing raw gases (TiCl4 and NH3) and inert gas (N2) are fed into treating vessel (2). The internal pressure of the treating vessel (2) is detected by means of pressure gauge (6), and the flow rates of treating gases fed into the treating vessel (2) are controlled on the basis of detection results. Purging of raw gases is performed with inert gas. The total flow rate of treating gases is controlled by fixing the flow rates of raw gases and controlling the flow rate of inert gas, so that the internal pressure of the treating vessel (2) is maintained constant. The time required for discharging of raw gases can be shortened, so that the time for switching of raw gases can be shortened. Further, the temperature of substrate surface during the treating can be maintained constant.</p>
申请公布号 WO2004021415(A1) 申请公布日期 2004.03.11
申请号 WO2003JP10377 申请日期 2003.08.15
申请人 TOKYO ELECTRON LIMITED;KANNAN, HIROSHI;ISHIZAKA, TADAHIRO;KOJIMA, YASUHIKO;OSHIMA, YASUHIRO;SHIGEOKA, TAKASHI 发明人 KANNAN, HIROSHI;ISHIZAKA, TADAHIRO;KOJIMA, YASUHIKO;OSHIMA, YASUHIRO;SHIGEOKA, TAKASHI
分类号 C23C16/52;C23C16/34;C23C16/44;C23C16/455;H01L21/285;H01L21/31;(IPC1-7):H01L21/02 主分类号 C23C16/52
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